|  | Octave-Wcalc: ic_microstrip_syn 
 ic_microstrip_syn - Integrated circuit microstrip transmission line synthesis
 SYNOPSIS[w_out, h_out, tox_out, l_out] = 
ic_microstrip_syn(z0, w, h, l, tmet, rho, rough, er, tand, f, flag)PARAMETERSINPUT PARAMETERS
z0
: desired characteristic impedance (Ohms)w
: width of ic_microstrip line (meters)h
: substrate thickness (meters)l
: lentgh of ic_microstrip line (meters)tmet
: metal thickness (meters)rho
: resistivity of wire (relative to copper)rough
: conductor surface roughness (meters-rms)er
: substrate relative permitivittytand
: substrate loss tangentf
: synthesis frequency (Hz)flag
: indicates which parameters should be optimized
    
flag=1 : synthesize the metal widthflag=1 : synthesize the substrate thicknessflag=2 : synthesize the oxide thickness OUTPUT VALUES
w_out
: calculated metal widthh_out
: calculated substrate thicknesstox_out
: calculated oxide thicknessl_out
: calculated metal length DESCRIPTION
Function to synthesize the physical dimenstions of a single
ic_microstrip transmission line to achieve a desired characteristic
impedance and electrical length.  The desired characteristic
impedance and some of the physical
dimensions of the ic_microstrip line are given as inputs and the
remaining dimensions are calculated.
The model accounts for dispersion (frequency dependent propagation
velocity).
                 |<--W-->|
                  _______    
                 | metal | <- tmet,rho,rough
    ----------------------------------------------
   {**************  Oxide (tox,eox) **************
    ----------------------------------------------
   (  substrate                          /|\     (
    )   es,sigmas                     H   |       )
   (                                     \|/     (
    ----------------------------------------------
    XXXXXXXXXXXXXXXXXX ground XXXXXXXXXXXXXXXXXXXX
 EXAMPLE % desired impedance
z0=75;
 % desired electrical length (degrees)
elen=90;
 % micron to meters conversion factor
sf=1.0e-6;
 % width 
w=160e-6;
 % length
l=1000e-6;
 % oxide thickness
tox=1.0e-6;
 % oxide relative dielectric constant
eox=4.0;
 % substrate thickness
h=250e-6;
 % substrate relative dielectric constant
es=11.8;
 % substrate conductivity (1/(ohm-m))
sigmas=10;
 % metal thickness
tmet=1.6e-6;
 % metal resitivity (ohm-m)
rho=3e-8;
 % metal surface roughness
rough=0;
 % frequency
f=2.4e9;
 % synthesize width
flag=0;
[w_out,h_out,tox_out,l_out] = ...
    ic_microstrip_syn(z0,elen,w,l,tox,eox,h,es,sigmas,tmet,rho,rough,f,flag);
disp(sprintf('w   = %8.3g um', w_out*1e6));
disp(sprintf('h   = %8.3g um', h_out*1e6));
disp(sprintf('tox = %8.3g um', tox_out*1e6));
disp(sprintf('l   = %8.3g um', l_out*1e6));
SEE ALSOair_coil_calcair_coil_syn
 coax_calc
 coax_syn
 coupled_microstrip_calc
 coupled_microstrip_syn
 ic_microstrip_calc
 ic_microstrip_syn
 microstrip_calc
 microstrip_syn
 stripline_calc
 stripline_syn
 
 AUTHOR
Dan McMahill
 BUGS
None known
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